Preparation and Photoelectric Properties of Metal-Semiconductor-Metal TiO 2 Ultraviolet Detectors
نویسندگان
چکیده
منابع مشابه
Metal-semiconductor-metal ultraviolet photodetector based on GaN
A metal-semiconductor-metal (MSM) ultraviolet photodetector has been fabricated using unintentionally doped n-GaN films grown on sapphire substrates. Its dark current, photocurrent under the illumination with λ = 360 nm light, responsivity, and the dependence of responsivity on bias voltage were measured at room temperature. The dark current of the photodetector is 1.03 nA under 5 V bias, and i...
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ژورنال
عنوان ژورنال: Rare Metal Materials and Engineering
سال: 2017
ISSN: 1875-5372
DOI: 10.1016/s1875-5372(18)30006-7